Aoyama T | Hitachi Ltd. Ibaraki Jpn

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概要

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著作論文

In Situ Formation of Ohmic Contact Electrodes of Cu and Ag onto the Fractured Surface of (Bi, Pb)-Sr-Ca-Cu-O Ceramics
Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
Ru Electrode Deposited by Sputtering in Ar/O_2 Mixture Ambient
Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient
High Tilt Angle Ion Implantation into Polycrystalline Si Gates
Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
Study of L_ dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
Boron Diffusion in SiO_2 Involving High-Concentration Effects
Boron Diffusion in SiO_2 Involving High-Concentration Effects
Scanning Tunneling Microscopy Study of Submicron-Sized pn Junction on Si(001) Surfaces
Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing
TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter

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