Arimoto H | Semiconductor Leading Edge Technologies Inc.
スポンサーリンク
概要
関連著者
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Arimoto H
Semiconductor Leading Edge Technologies Inc.
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ARIMOTO Hiroshi
Semiconductor Leading Edge Technologies
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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ARIMOTO Hiroshi
Fujitsu Laboratories Ltd.
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AOYAMA Takahiro
Daihen Co.
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Aoyama T
Hitachi Ltd. Ibaraki Jpn
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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HORIUCHI Kei
Fujitsu Laboratories Ltd.
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Horiuchi K
Fujitsu Laboratories Ltd.
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Horiuchi Kei
Fujitsu Laboratories
著作論文
- Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
- Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Fast and Simplified Technique of Proximity Effect Correction for Ultra Large Scale Integrated Circuit Patterns in Electron-Beam Projection Lithography
- Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography
- Study of L_ dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
- Boron Diffusion in SiO_2 Involving High-Concentration Effects