Study of L_<GATE> dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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AOYAMA Takahiro
Daihen Co.
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Aoyama T
Hitachi Ltd. Ibaraki Jpn
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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FUKUTOME Hidenobu
Fujitsu Laboratories Ltd.
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ARIMOTO Hiroshi
Fujitsu Laboratories Ltd.
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ARIMOTO Hiroshi
Semiconductor Leading Edge Technologies
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Fukutome Hidenobu
Fujitsu Laboratories Ltd. Silicon Technologies Laboratories Advanced Cmos Technology Lab.
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Arimoto H
Semiconductor Leading Edge Technologies Inc.
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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