Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization

概要

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In this paper we showed electron projection lithography (EPL) applicability to via formation in a back-end-of-line (BEOL) process for 45-nm technology node through fabricating a two-layer metallization device. We developed a single-layer via-resist process for 45-nm technology node. In order to prevent resist profile deteriorations, we optimized process conditions of a bottom anti-reflective coating (BARC) and an electrical conductive film (ECF). As a result, fine 60-nm ($1:1$) via-patterns were obtained after low-$k$ dry-etching and 67-nm via-holes filling with Cu could be confirmed by using cross-sectional transmission electron microscope (TEM). These results suggested the single-layer via-resist process we developed could be applied for 45-nm technology node. In addition, for 32-nm technology node, we developed a tri-layer via-resist process that had a high resolution compared with a single-layer resist process. There, we could obtain extremely fine 40-nm ($1:1$) top-layer via-resist patterns. We believe that EPL has high applicability to via formation in BEOL process for not only 45-nm but also 32-nm technology node.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-06-30