Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
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概要
- 論文の詳細を見る
A 70 nm pitch two-level interconnects have been successfully fabricated using extreme ultraviolet lithography (EUVL) ($\lambda=13.5$ nm). EUVL enabled us to obtain fine pattern formation and usable overlay accuracy at each metal and via patterning. CF3I etching gas and ruthenium (Ru) barrier film deposited with physical vapor deposition (PVD) are key technologies for achieving good electrical properties. Very low effective resistivity of less than 4.5 μ$\Omega$ cm in 35-nm-width wiring was obtained by using PVD-Ru barrier film. Via resistance of 12.4 $\Omega$ for via-holes with diameter of 35 nm was obtained.
- 2011-02-25
著者
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Soda Eiichi
Semiconductor Leading Edge Technologies Inc.
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Hosoi Nobuki
Semiconductor Leading Edge Technologies Inc.
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Kondo Seiichi
Semiconductor Leading Edge Technologies Inc. (selete)
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Saito Shuichi
Semiconductor Leading Edge Technologies Inc. (selete)
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Saito Shuichi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shiohara Morio
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nakamura Naofumi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Oda Noriaki
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Hajime
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Tanaka Yuusuke
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Kawamura Daisuke
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Takigawa Yukio
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Mori Ichiro
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Oda Noriaki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shiohara Morio
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Hajime
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takigawa Yukio
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hosoi Nobuki
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Tanaka Yuusuke
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Soda Eiichi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Kondo Seiichi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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