Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations

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概要

• 論文の詳細を見る

• We have computationally explored the chemical structures of carbon-doped silicon oxide (SiOCH) films that give the smallest dielectric constant ($k$) under the required mechanical strength for low-$k$ dielectrics. The focus of this study is on the SiOCH structures that have hydrocarbon components in the polymer network as cross-links. It has been found that SiOCH films of small dielectric constants can have improved mechanical strengths if the hydrocarbon components form cross-links, instead of the terminal methyl groups in the conventional structure. The calculated results suggest that SiOCH films of ideal structures can have substantially smaller dielectric constants than films of current interconnect technology with the same mechanical strengths.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-09-15

著者

• Kobayashi Nobuyoshi

  Semiconductor & Integrated Circuits Div. Hitachi Ltd.

• INOUE Minoru

  TAIYO NIPPON SANSO CORPORATION

• HASAKA Satoshi

  TAIYO NIPPON SANSO CORPORATION

• SHINRIKI Manabu

  Taiyo Nippon Sanso Corporation

• MIYAZAWA Kazuhiro

  Taiyo Nippon Sanso Corporation

• SAKOTA Kaoru

  Taiyo Nippon Sanso Corporation

• Ohno Takahisa

  First Principles Simulation Group Computational Materials Science Center National Institute For Mate

• Hamada Tomoyuki

  The Fsis Center For Collaborative Research Institute Of Industrial Science University Of Tokyo

• Tajima Nobuo

  First Principles Simulation Group Computational Materials Science Center National Institute For Mate

• Yoneda Katsumi

  Semiconductor Leading Edge Technologies Inc. (selete)

• Kondo Seiichi

  Semiconductor Leading Edge Technologies Inc. (selete)

• Hamada Tomoyuki

  The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• Kobayashi Nobuyoshi

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Inaishi Yoshiaki

  Taiyo Nippon Sanso Corporation, Toyo Bldg., 1-3-26 Koyama, Shinagawa-ku, Tokyo 142-8558, Japan

• Ohno Takahisa

  First Principles Simulation Group, Computational Materials Science Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

• Inoue Minoru

  Taiyo Nippon Sanso Corporation, Toyo Bldg., 1-3-26 Koyama, Shinagawa-ku, Tokyo 142-8558, Japan

• Tajima Nobuo

  First Principles Simulation Group, Computational Materials Science Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

• Yoneda Katsumi

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Shinriki Manabu

  Taiyo Nippon Sanso Corporation, Toyo Bldg., 1-3-26 Koyama, Shinagawa-ku, Tokyo 142-8558, Japan

• TAJIMA Nobuo

  First Department of Internal Medicine, Nagasaki University School of Medicine

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