Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
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概要
- 論文の詳細を見る
The atomic structure of the GaAs(001) surface has been disputed since molecular beam epitaxy (MBE) technique was developed in the earlier nineteen sixties. The invention of scanning tunneling microscopy (STM) with its real-space atom-resolution capability, has revolutionized the situation. This paper reviews the STM investigations of the principal reconstructions found on the GaAs(001) surface, As-rich 2x4 and 2x6, Ga-rich 4x2 and 4x6. These studies, together with advanced theoretical analyses, have finally resulted in establishment of a unified structural model for various reconstructions, with which we can explain most of the observations and long-standing controversies about the atomic structures and surface stoichiometries.GaAsscanning tunneling microscopymolecular beam epitaxyreflection high energy electron diffractionfirst-principles total energy calculation
- 東北大学の論文
- 1997-03-31
著者
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SAKURAI Toshio
Institute for Materials Research (IMR), Tohoku University
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HASHIZUME Tomihiro
Advanced Research Laboratory, Hitachi, Ltd.
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Sakurai T
Institute For Materials Research (imr) Tohoku University
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Xue Qi
Institute of Physics, Chinese Acad Sci.
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Xue Qi
Institute Of Material Research Tohoku University
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Hashizume Tomihiro
Advanced Research Laboratory Hitachi Lid.
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Hasegawa Yukio
Institute for Materials Research, Tohoku University
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OHNO Takahisa
National Institute for Materials Science (NIMS)
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Ohno T
National Research Institute For Metals
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Ohno Takahisa
National Institute For Materials Science
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Ohno Takahisa
National Research Institute For Metals
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Hasegawa Y
Institute For Solid State Physics University Of Tokyo
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Hasegawa Yukio
Institute For Materials Research (imr) Tohoku University And Precursory Research For Embryonic Scien
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Ichimiya Ayahiko
Applied Physics Department, Nagoya University
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Ichimiya Ayahiko
Applied Physics Department Nagoya University
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Ohno Takahisa
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Ohno Takahisa
Science University Of Tokyo
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Hashizume Tomihiro
Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
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