Combining Atomic Force Microscopic Lithography with Photolithography
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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HEIKE Seiji
Advanced Research Laboratory, Hitachi, Ltd.
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HASHIZUME Tomihiro
Advanced Research Laboratory, Hitachi, Ltd.
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Ishibashi M
Advanced Research Laboratory Hitachi Ltd.
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Ishibashi Masayoshi
Advanced Research Laboratory Hitachi Ltd.
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Hashizume Tomihiro
Advanced Research Laboratory Hitachi Lid.
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Heike S
Advanced Research Laboratory Hitachi Ltd.
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Heike Seiji
Advanced Research Laboratory Hitachi Ltd.
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Hitosugi T.
Department Of Superconductivity University Of Tokyo:(present Address)department Of Chemistry Univers
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Heike S.
Advanced Research Laboratory Hitachi Ltd.
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Ishibashi M
Advanced Research Laboratory Hitachi Ltd. Hatoyama
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Heike S
Hitachi Ltd. Saitama Jpn
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Hashizume Tomihiro
Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
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Heike Seiji
Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
関連論文
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- Fabrication Process of Fine Electrodes Using Shadow Mask Evaporation and Tip-Induced Local Oxidation
- Stability of Metallofullerene LaC_ on UV Light Irradiation
- Preparation and Oxidation of Metallofullerenes Containing Praseodymium
- Nanofabrication Using Atomic Force Microscopy Lithography for Molecular Devices
- Dot-Array Resist Patterning Using Scanning Probe Microscopy with a Hybrid Current-Voltage Control Method
- Nanofabrication Using Atomic Force Microscopy Lithography Combined with Optical Lithography
- Combining Atomic Force Microscopic Lithography with Photolithography
- Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System
- Fabrication of High-Resolution and High-Aspect-Ratio Patterning on a Stepped Substrate by Scanning Probe Lithography Using a Multilayer-Resist System
- Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
- Characteristics of Nanoscale Lithography Using Atomic Force Microscope with Current-Controlled Exposure System
- Direct Imaging of Thermodynamic Process In Atom Migration by Using Scanning Tunneling Microscopy
- Reduced Density of Missing-Dimer Vacancies on Tungsten-Contaminated Si (100)-(2×n) Surface by Hydrogen Termination
- Control of Surface Current on a Si(111) Surface by Using Nanofabrication
- Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on am H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets
- Initial Stage of Molecular Adsorption on Si(100) and H-terminated Si(100) Investigated by UHV-STM(STM-Si(001))
- Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100) -2 × 1 -H Surface
- Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
- Evaluation of Thin Silicon Dioxide Layers by Beam Assisted Scanning Tunneling Microscope
- Analysis of Rubbed Polyimide Films by Polarized Infrared Spectroscopy : Effects of Immersion in Organic Solvents
- Pulse Injection of Carbon Nanotubes onto a H-terminated Si(100) Surface
- First Principles Study of Dihydride Chains on H-Terminated Si(100)-2×1 Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
- Scanning Tunneling Microscopy/Spectroscopy of La_2@C_ Multilayer Islands on Si(100)-2×1-H Surfaces
- Initial-Stage Dihydride Formation on Si(100)-2x1-H Surface
- Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
- FI-STM Investigation of Fullerenes Adsorbed on the Semiconductor and Metal Surfaces(STM-C_)
- Initial Backbond Oxidation at an Unpaired Dangling Bond Site on a Hydrogen-Terminated Si (100) 2×1 Surface
- Electrical Conductivity Measurement of DNA Double-Stranded Chains by "One-by-One" Cutting Method Using Atomic Force Microscopy(Cross-disciplinary physics and related areas of science and technology)
- Electrical Conduction of Ag Nanowire Fabricated on Hydrogen-Terminated Si(100) Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
- Study of Initial Stage of Molecular Adsorption on Si(100) by Scanning Tunneling Microscopy
- Growth Control of Nano-Needle on Silicon Surface Using Scanning Tunneling Microscope
- Development of an In-Situ Method of Fabricating Artificial Atom Structures on the Si(100) Surface
- Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
- In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
- In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
- Room-Temperature Adsorption of Si Atoms on H-terminated Si(001)-2×1 Surface(Condensed Matter: Structure, Mechanical and Thermal Properties)
- Nanofabrication Using Atomic Force Microscopy Lithography Combined with Optical Lithography
- Surface Potential Measurement by Atomic Force Microscopy Using Quartz Resonator
- First Principles Study of Dihydride Chains on H-Terminated Si(100)-$2{\times}1$ Surface
- Electrical Conduction of Ag Nanowire Fabricated on Hydrogen-Terminated Si(100) Surface
- Scanning Tunneling Microscopy/Spectroscopy of La2@C72 Multilayer Islands on Si(100)-2$\times$1-H Surfaces
- Fabrication of Four-Probe Fine Electrodes Using Scanning-Probe Nanofabrication
- Electronic Structures of Individual Poly(3-hexylthiophene) Nanowires on Hydrogen-Terminated Si(100) Surfaces
- Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
- Initial-Stage Dihydride Formation on Si(100)-$2{\times}1$-H Surface