FI-STM Investigation of Fullerenes Adsorbed on the Semiconductor and Metal Surfaces(STM-C_<60>)
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概要
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Our systematic investigation using field-ion scanning tunneling microscopy (FI-STM) is reviewed for the adsorption and film growth of fullerenes (C_<60>, C_<70>, C_<80>, and C_<84>) and metallofullerenes (Sc@C_<74>/Sc_2@C_<74>, Sc_2@C_<84>, Y@C_<82>, and Gd@C_<82>) on the Si(100)-2x1, Si(111)-7x7, GaAs(001)-2x4-As, Cu(111)1x1, and Ag(111)1x1 surfaces. The fullerene molecules are stable on the Si(100)-2x1 and Si(111)-7x7 surfaces at room temperature because of the strong bonding to the substrate dangling bonds. As a result, unique intramolecular structures of C_<60> molecule are observed. The STM images of the C_<84>, Sc@C_<74>/Sc_2@C_<74>, and Sc_2@C_<84> molecules are used to draw information on the molecular structures. In contrast to the Si surfaces, the fullerene molecules are mobile on the terrace of the metal surfaces and initially segregate to the step. A well-ordered two dimensional overlayer forms with a close-packed arrangement upon annealing the fullerene covered surfaces. On the Cu(111) surface, the commensurate (4x4) phase forms for the cases of the C_<60>, C_<70> and C_<60(X)>C_<70(1-X)> adsorption, indicating a strong interaction between the Cu substrate and fullerenes. Beautiful intramolecular structures of the C_<60> and C_<70> molecules are observed and are interpreted as the local mappings of the electron density of states. One-dimensional cluster formation of C_<60>, Y@C_<82>, and Gd@C_<82> on the step of the Cu(111)-1x1 surface is analyzed and the preferential dimer formation is only observed for the case of Y@C_<82>, which is attributed to the interaction between the unpaired electrons of the Y@C_<82> molecules. On the Ag(111) surface, the C_<60> and Sc_2@C_<84> monolayer films show several phases that have an almost identical nearest neighbour distance but are rotated from each other. Among the systems studied, C_<60> on the GaAs(001)-2x4-As surface shows a unique highly-strained fcc(110)-oriented multi-layer film growth, while all other systems show the well-known fcc(111)-oriented multi-1ayer growth.C_<60>fullerenesSTMmetalsemiconductoradsorptionfilm growth
- 東北大学の論文
- 1997-03-28
著者
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SAKURAI Toshio
Institute for Materials Research (IMR), Tohoku University
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HASHIZUME Tomihiro
Advanced Research Laboratory, Hitachi, Ltd.
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Hashizume Tomihiro
Advanced Research Laboratory Hitachi Ltd.
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Hashizume Tomihiro
Advanced Research Laboratory Hitachi Lid.
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Hashizume Tomihiro
Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
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