Electronic Structures of Individual Poly(3-hexylthiophene) Nanowires on Hydrogen-Terminated Si(100) Surfaces
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概要
- 論文の詳細を見る
Electronic structures of individual conducting polymers, poly(3-hexylthiophene)s (P3HTs), fixed on a hydrogen-terminated Si(100) surface have been examined by scanning tunneling microscopy/spectroscopy and first-principles calculations within the density-functional approach. The calculations reveal that the electronic structure of the polymer is only weakly influenced by the substrate, which ensures that the fixed polymers maintain a conduction property similar to that of isolated polymers. The current–voltage curves for the substrate-molecule-tip junction show rectification characteristics, indicating the carrier doping in the fixed polymers.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-03-15
著者
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Heike Seiji
Advanced Research Laboratory Hitachi Ltd.
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Suwa Yuji
Advanced Research Laboratory Hitachi Ltd.
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Fujimori Masaaki
Advanced Research Laboratory Hitachi Ltd.
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Terada Yasuhiko
Institute Of Applied Physics University Of Tsukuba
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Shigekawa Hidemi
Institute of Applied Physics, CREST, 21st COE, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hashizume Tomihiro
Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
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Terada Yasuhiko
Institute of Applied Physics, CREST, 21st COE, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Heike Seiji
Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
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Fujimori Masaaki
Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
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