Initial Stage of Nitridation of GaAs(001): Atomic Scale View
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-06-30
著者
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重川 秀実
筑波大学物理工学系
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SHIGEKAWA Hidemi
Institute of Applied Physics, University of Tsukuba
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重川 秀実
Univ. Tsukuba Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And Crest Japan Science And Technology Corporation (jst) University Of
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Oigawa Haruhiro
Institute of Materials Science, University of Tsukuba
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Imayoshi Takahiro
Department of Applied Physics, University of Tokyo
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Tokumoto Hiroshi
Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Researc
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Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)
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Imayoshi Takahiro
Department Of Applied Physics University Of Tokyo
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Oigawa Haruhiro
Institute Of Materials Science University Of Tsukuba
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Tokumoto Hiroshi
Joint Research Center For Atom Technology National Institute For Advanced Interdisciplinary Research
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Oigawa Haruhiro
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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