Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-03-20
著者
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ANDO KOJI
Department of Surgery and Science, Graduate School of Medical Sciences, Kyushu University
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KOMA Atsushi
Department of Chemistry, The University of Tokyo
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SAIKI Koichiro
Department of Chemistry, The University of Tokyo
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Fan J‐f
Riken The Institute Of Physical And Chemical Research
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Oigawa Haruhiro
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba:(present Address)insitute Of Physical And Chemi
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Oigawa H
Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba
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Oigawa Haruhiro
Institute Of Materials Science University Of Tsukuba
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Ando Koji
Department Of Applied Chemistry Muroran Institute Of Technology
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Ando Koji
Department Of Chemistry University Of Tokyo
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Ando Koji
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Oigawa Haruhiro
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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