Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
スポンサーリンク
概要
- 論文の詳細を見る
Effect of Si-doping levels and annealing temperature on disordering of 150-Å AlAs/150-Å GaAs superlattices is studied. The doping level of 4×10^<18> cm^<-3> cause disorder for 800℃, 2 h annealing, while the doping level of 1×10^<18> cm^<-3> does not induce disorder on this annealing condition. A superlattice which is doped with 1×10^<19> Si cm^<-3> disintegrates after 650℃, 2 h annealing and the diffusion coefficient of Al-Ga interdiffusion is estimated to be 3×10^<-17> cm^2s^<-1>. For 800℃, 2 h annealing the two undoped AlAs/GaAs layers adjacent to the doped region are disordered by Si diffusion.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
-
Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
-
Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
-
Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
-
HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
-
MATSUURA Nobuyuki
Institute of Materials Science, University of Tsukuba
-
Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
-
Nannichi Yasuo
University Of Tsukuba
-
Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
-
Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
-
HASEGAWA Fumio
Tohoku University of Art and Design
-
Kawabe M
Institute Of Applied Physics University Of Tsukuba
-
Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
-
Matsuura Nobuyuki
Institute Of Materials Science University Of Tsukuba
-
SHIMIZU Norisato
Institute of Materials Science, University of Tsukuba
-
Shimizu Norisato
Institute Of Materials Science University Of Tsukuba
-
HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
関連論文
- Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
- Comparison of Optical Properties of In_Ga_As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells
- Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
- Effect of Charge Distribution in Quantum Dots Array on Two-Dimensional Electron Gas
- Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
- The Procedure to Realize Two-Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays
- High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications
- Anisotropic Transport Properties in Twin-Free Bi_2Sr_2CaCu_2O_x Thin Films on Tilted LaAlO_3 (001) Substrates
- Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- Composition Control of Al_xGa_As and New Type of Superlattice by Pulsed Molecular Beam
- Surfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InP
- Enhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
- Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
- Epitaxial Growth of Semiconducting BaSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
- Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
- Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
- Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
- Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
- Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
- Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
- Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
- Cracking Efficiency of Hydrogen with Tungsten Filament in Molecular Beam Epitaxy
- Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
- GaAs/AlGaAs Quantum Wells Grown by Low-Temperature Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Formation of β-FeSi_2 Layers on Si(001) Substrates
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
- Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
- Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE
- Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
- Cubic Dominant GaN Growth on (OO1) GaAs Substrates by Hydride Vapor Phase Epitaxy
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
- Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen FluX Modulation in RF Molecular Beam Epitaxy : Semiconductors
- Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
- Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
- Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
- Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
- Array of the Self-Organized InGaAs Quantum Dots on GaAs (311)B Substrates by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
- Anisotropic Lateral Growth of GaAs by Molecular Beam Epitaxy
- A Molecular Beam Epitaxy Approach to Quantum Dot Arrays
- Fabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxy
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
- Low Carbon Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs Using Dimethylamine Gallane
- Growth Condition Dependence of Carbon Reduction in GaAs Chemical Beam Epitaxy Using Trisdimethylamimo-Arsine and Trimethylgallium
- Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
- Effect of Atomic Hydrogen on GaAs Growth on GaAs(311)A Substrate in Molecular Beam Epitaxy
- Formation of High-Density Quantum Dot Arrays by Molecular Beam Epitaxy ( Quantum Dot Structures)
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
- Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
- Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
- Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor
- Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
- Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- Surface Diffusion of Bi_2Sr_2CuO_ Thin Films Grown by Molecular Beam Epitaxy
- Bi_2Sr_2CuO_x Thin Films with (011) Vicinal Surfaces Fabricated on Vicinal LaSrGaO_4(110) by Molecular Beam Epitaxy
- Two-Dimensional Epitaxial Growth of Bi_2Sr_2CuO_x on Tilted SrTiO_3(001) Substrates Studied by Reflection High Energy Electron Diffraction
- Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
- Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation
- Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
- Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
- Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Be Doping Effect on Growth Kinetics of GaAs Grown by MBE
- Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
- Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- Preferential Desorption of Ga from Al_xGa_As Grown by Molecular Beam Epitaxy
- Effect of AlAs Buffer Layers on Epitaxial Growth of GaAs on Si (100)
- Photoluminescence of Al_xGa_As/Al_yGa_As Multiguantum Wells Grown by Pulsed Molecular Beam Epitaxy
- Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
- Self-Organization of High-Density III-V Quantum Dots on High-Index Substrates
- Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
- Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
- Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
- Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
- Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy
- Elementary Processes in Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
- Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen
- Atomic Image Observation of Hydrogen-Saturated Si(100) Prepared by Atomic Hydrogen Irradiation
- Selective Growth of GaAs by Molecular Beam Epitaxy
- Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si
- Fermi Level Effect on Compositional Disordering of AlAs/GaAs Superlattice
- Growth of InGaAs Quantum Dots on the AlGaAs(311)B Surface