Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_<1-x>Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-06-15
著者
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末益 崇
筑波大学大学院数理物質科学研究科電子・物理工学専攻
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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INOMATA Yuya
Institute of Applied Physics, University of Tsukuba
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IZAWA Takamasa
Institute of Applied Physics, University of Tsukuba
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Inomata Yuya
Institute Of Applied Physics University Of Tsukuba
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Izawa Takamasa
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Inomata Y
Institute Of Applied Physics University Of Tsukuba
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