Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
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概要
- 論文の詳細を見る
We have epitaxially grown $p^{+}$-Si/$\beta$-FeSi2(8 nm)/$n^{+}$-Si (SFS) light-emitting diodes (LEDs) on Si(001) substrates by molecular-beam epitaxy (MBE) using Ga-doped $p^{+}$-Si layers ($p\sim 10^{19}$ cm-3). 1.6 μm electroluminescence (EL) was realized at room temperature (RT) for the first time for the SFS LEDs prepared without high-temperature annealing.
- Japan Society of Applied Physicsの論文
- 2008-05-25
著者
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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SUZUNO Mitsushi
Institute of Applied Physics, University of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Presto Japan Science And Technology Agency
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Suzuno Mitsushi
Institute Of Applied Physics University Of Tsukuba
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Murase Shigemitsu
Institute Of Applied Physics University Of Tsukuba
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Koizumi Tomoaki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Koizumi Tomoaki
Institute Of Applied Physics University Of Tsukuba
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