Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
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概要
- 論文の詳細を見る
We have epitaxially grown $p$-Si/$\beta$-FeSi2/$n$-Si double heterostructures light-emitting diodes (LEDs) on Si(111) substrates by molecular-beam epitaxy. The 1.6 μm electroluminescence intensity measured at room temperature (RT) was improved significantly for LEDs constructed using a thick $\beta$-FeSi2 active layer (190 nm) embedded in heavily-doped Si $p$--$n$ diodes formed on floating-zone Si(111) substrates. The external quantum efficiency was increased up to approximately 0.02% at RT.
- Japan Society of Applied Physicsの論文
- 2008-02-25
著者
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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SUZUNO Mitsushi
Institute of Applied Physics, University of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Presto Japan Science And Technology Agency
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Suzuno Mitsushi
Institute Of Applied Physics University Of Tsukuba
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Murase Shigemitsu
Institute Of Applied Physics University Of Tsukuba
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Koizumi Tomoaki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Koizumi Tomoaki
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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