Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• The critical thickness of a 1.85%-strained In0.80Ga0.20As quantum well grown on an InP substrate by metalorganic vapor phase epitaxy and using Sb as a surfactant was investigated by using cathodoluminescence analysis at room temperature (RT). The critical thicknesses for samples prepared without and with the use of Sb were found to be approximately 8 and 9 nm, respectively. Although the use of Sb did not increase the critical thickness, it could suppress the number of defects caused by the three-dimensional island growth of the quantum well even beyond the critical thickness. As a result, the thickness of the quantum well, from which the photoluminescence emission was observed at RT, increased from 10 to 15 nm when Sb was used.

• Japan Society of Applied Physicsの論文
• 2008-11-25

著者

• KONDO Yasuhiro

  NTT Photonics Laboratories

• Kondo Yasuhiro

  Ntt Photonics Laboratories Ntt Corporation

• Sekiguchi Takashi

  Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And

• Sekiguchi T

  Institute For Materials Research Tohoku Unviersity

• Sekiguchi Takashi

  Univ. Tsukuba Ibaraki Jpn

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science (nims)

• Sekiguchi Takashi

  Department Of Chemistry And Materials Technology Kyoto Institute Of Technology

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Sato Tomonari

  Ntt Photonics Laboratories Ntt Corporation

• Sekiguchi Takashi

  Advanced Nano-characterization Center National Institute For Materials Science

• Sato Tomonari

  Ntt Photonics Laboratories

• Sekiguchi Takashi

  Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

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