Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
The critical thickness of a 1.85%-strained In0.80Ga0.20As quantum well grown on an InP substrate by metalorganic vapor phase epitaxy and using Sb as a surfactant was investigated by using cathodoluminescence analysis at room temperature (RT). The critical thicknesses for samples prepared without and with the use of Sb were found to be approximately 8 and 9 nm, respectively. Although the use of Sb did not increase the critical thickness, it could suppress the number of defects caused by the three-dimensional island growth of the quantum well even beyond the critical thickness. As a result, the thickness of the quantum well, from which the photoluminescence emission was observed at RT, increased from 10 to 15 nm when Sb was used.
- Japan Society of Applied Physicsの論文
- 2008-11-25
著者
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KONDO Yasuhiro
NTT Photonics Laboratories
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Kondo Yasuhiro
Ntt Photonics Laboratories Ntt Corporation
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Sekiguchi Takashi
Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And
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Sekiguchi T
Institute For Materials Research Tohoku Unviersity
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Sekiguchi Takashi
Univ. Tsukuba Ibaraki Jpn
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science (nims)
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Sekiguchi Takashi
Department Of Chemistry And Materials Technology Kyoto Institute Of Technology
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Sato Tomonari
Ntt Photonics Laboratories Ntt Corporation
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Sekiguchi Takashi
Advanced Nano-characterization Center National Institute For Materials Science
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Sato Tomonari
Ntt Photonics Laboratories
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Sekiguchi Takashi
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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