Epitaxial Growth of Semiconducting BaSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We have grown [100]-oriented BaSi2 multidomain epilayers on Si(111) substrates by molecular beam epitaxy (MBE) using a BaSi2 epitaxial template formed by reactive deposition epitaxy (RDE). The [100]-oriented BaSi2 films were obtained over a wide temperature range from 450 to 700°C: The optimum growth temperature was about 600°C at which the integrated intensity of X-ray diffraction peak was maximum and the full width at half maximum (FWHM) was minimum. X-ray pole figure measurements revealed that there were three epitaxial variants of [100]-oriented BaSi2 due to the three-fold symmetry of the Si(111) surface.
- Japan Society of Applied Physicsの論文
- 2004-04-01
著者
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Inomata Yuya
Institute Of Applied Physics University Of Tsukuba
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Nakamura Tomoyuki
Institute Of Applied Physics University Of Tsukuba
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Nakamura Tomoyuki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Inomata Yuya
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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