Epitaxial Growth of Ferromagnetic Fe3Si Films on CaF2/Si(111) by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Ferromagnetic Fe3Si/CaF2 hybrid structures were epitaxially grown on Si(111) by molecular beam epitaxy. When Si and Fe were directly deposited on the Si substrate, it was difficult to prevent inclusion of FeSi in the grown films. This problem was overcome by forming a CaF2 epitaxial film on Si(111) first, followed by codeposition of Si and Fe to form Fe3Si. Fe3Si films were epitaxially grown on the CaF2 at 400°C. A distinct square-like hysteresis loop was observed at room temperature in the magnetic field dependence of Kerr rotation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-05-10
著者
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Yanagihara Hideto
Institute Of Applied Physics University Of Tsukuba
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Akinaga Hiroyuki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kita Eiji
Institute For Applied Physics Tsukuba University
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Umada Masakazu
Institute Of Applied Physics University Of Tsukuba
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Sunohara Tsuyoshi
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Yanagihara Hideto
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sunohara Tsuyoshi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Umada Masakazu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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