Growth and Characterization of Si-Based Light-Emitting Diode with $\beta$-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We fabricated single-, double- and triple-layered $\beta$-FeSi2-particles structure on Si(001) substrates by reactive deposition epitaxy (RDE) for $\beta$-FeSi2 and by molecular beam epitaxy (MBE) for Si, and realized electroluminescence (EL) at 310 K. Photoluminescence (PL) measurements revealed that the 77 K PL intensity of $\beta$-FeSi2 increased almost proportionally with the number of $\beta$-FeSi2-particles/Si layers. It was also found that the multilayered structure enhanced the EL intensity of $\beta$-FeSi2 particularly at low temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Li Cheng
Institute for Laser Science, University of Electro-Communications
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Ozawa Yoshinori
Institute Of Applied Physics University Of Tsukuba
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Sunohara Tsuyoshi
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Suemasu Takashi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Hasegawa Fumio
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ozawa Yoshinori
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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