Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Tsuchiya Hajime
Department Of Polymer Science And Engineering Faculty Of Textile Science Kyoto Institute Of Technolo
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura Hajime
Nakano Central Research Institute Nakano Vinegar Co. Ltd.
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Okumura Hajime
Electrotechnical Laboratory
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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HASEGAWA Fumio
Tohoku University of Art and Design
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Tsuchiya H
Toshiba Corp. Kawasaki Jpn
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TSUCHIYA Harutoshi
Institute of Materials Science, University of Tsukuba
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OKAHISA Takuji
Institute of Materials Science, University of Tsukuba
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Yoshida S
The Second Department Of Internal Medicine Chiba University School Of Medicine
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Okahisa Takuji
Institute Of Materials Science University Of Tsukuba
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Yoshida S
Sharp Corp. Nara Jpn
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Tsuchiya Harutoshi
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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TSUCHIYA Harutoshi
Institlite of Materials Science, University of Tsukuba
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