Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties

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概要

• 論文の詳細を見る
• 1997-12-15

著者

• Kumagai Y

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Hashimoto S

  Texas Instruments Tsukuba R & D Center Ltd. Ibaraki Jpn

• HASHIMOTO Satoshi

  Texas Instruments Tsukuba Research and Development Center, Limited

• Kumagai Y

  Hitachi Ltd. Ibaraki Jpn

• Kumagai Yoshinao

  Institute Of Materials Science University Of Tsukuba

• YAMAMOTO Masaki

  Institute of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Hashimoto S

  Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Takakura K

  Institute Of Applied Physics University Of Tsukuba

• Hashimoto Satoshi

  Texas Instruments Tsukuba Research And Development Center Limited

• Yamamoto Masaki

  Institute Of Materials Science University Of Tsukuba

• Takakura Ken′ichiro

  Institute of Applied Physics, University of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• KUMAGAI Yoshinao

  Institute of Material Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

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