Mpeg-7メタデｰタフォｰマットに基づく大規模映像アｰカイブ･配信システム : 教育システム

スポンサーリンク

概要

• 論文の詳細を見る
• 2004-09-03

著者

• TANNO Yoshikazu

  Yamagata Digital Content Center for Research and Promotion

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Ito Manabu

  Tao Yamagata Video Archive Research Center

• MAEHARA Fumio

  Panasonic AVC & Networks Company, Matsushita Electric Ind. Co., Ltd.

• FUJIMOTO Makoto

  Panasonic System Solution Company, Matsushita Electric Ind. Co., Ltd.

• ITO Manabu

  Osaka University

• Maehara Fumio

  Telecommunication Advancement Organization Yamagata Video Archive Research Center

• Tanno Yoshikazu

  Yamagata Video Archive Research Center Telecommunications Advancement Organization

• Fujimoto Makoto

  Panasonic System Solution Company Matsushita Electric Ind. Co. Ltd.

関連論文

• Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
• Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
• Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
• Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
• Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
• Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
• Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
• Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
• Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
• 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
• Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
• Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
• Distributing Multiple Video Digest Using AVD (ユビキタス社会における画像電子関連技術論文特集号)
• M-10 An Adaptive Scheduling Algorithm for On-Demand Video Delivery System
• Mpeg-7メタデｰタフォｰマットに基づく大規模映像アｰカイブ･配信システム : 教育システム
• Verification Tests Approach Based on "MPEG-7 over Content ID" for the Large Scale Digital Archive
• Development of Content Retrieval Application Using MPEG-7 for Archive Video Materials
• BROADCASTING PROGRAM PRODUCTION SYSTEM BY USING PETA-BYTE CLASS LARGE SCALE ARCHIVE
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
• Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
• One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000℃ on GaAs (111) Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
• Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
• Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
• Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
• Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
• Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor
• Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
• Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
• Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
• Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
• Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
• Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
• Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
• Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
• Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
• Passivation Properties of Plasma CVD AlN Films for GaAs
• Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
• Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
• Effects of multi-reference pattern and training methods for a Japanese isolated syllable recognition
• Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl_3 and AsH_3 System : Condensed Matter
• In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl_3 by Surface Photo-Absorption Method
• Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl_3
• Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl_3 and AsH_3
• Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament

もっと見る 閉じる

スポンサーリンク