Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-02-20
著者
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SHIGEKAWA Hidemi
Institute of Applied Physics, University of Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Shigekawa Hidemi
Institute Of Material Science University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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KANAYA Hiroyuki
Institute of Material Science, University of Tsukuba
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YAMAKA Eiso
Tsukuba College of Technology
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Kanaya H
Institute Of Materials Science University Of Tsukuba
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Kanaya H
Toshiba Corp. Yokohama Jpn
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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