Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Li Cheng
Institute for Laser Science, University of Electro-Communications
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Ozawa Yoshinori
Institute Of Applied Physics University Of Tsukuba
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SUNOHARA Tsuyoshi
Institute of Applied Physics, University of Tsukuba
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