Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Mori Ryosuke
Institute Of Materials Science University Of Tsukuba
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Kumagai Y
Hitachi Ltd. Ibaraki Jpn
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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ISHIMOTO Kouichi
Institute of Materials Science, University of Tsukuba
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Mori R
Nagaoka Univ. Technol. Nagaoka Jpn
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Ishimoto Kouichi
Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.
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KUMAGAI Yoshinao
Institute of Material Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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