Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
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概要
- 論文の詳細を見る
AlAs and AlGaAs were successfully grown by a directly reacting of AlCl_3, GaCl_3 and AsH_3 for the first time. The AlCl_3 and GaCl_3 were contained in stainless steel evaporators (60℃-l20℃), and supplied by He carrier gas. The AsH_3 (10% in H_2) was supplied directly to the deposition zone by H_2 carrier gas during the growth. The AlAs layers could be grown in the temperature range from 550℃-70O℃, and a maximum growth rate of 3.5 μm/h was obtained. The AlGaAs was grown at 600℃, with a typical growth rate of about 2 μm/h. The Al content was controlled in the entire composition range but was not linearly proportional to the Al content in the supplied gas. These results suggest the possibility of new carbon-free gas sources for the chemical beam epitaxy (CBE) and atomic layer epitaxy (ALE).
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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JIN Yoshito
NTT LSI Laboratories
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KOBAYASHI RYUJI
Institute of Health Sciences, Faculty of Medicine, Hiroshima University
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Kobayashi Ryuji
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Jin Y
Ntt Microsystem Integration Laboratories
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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JIN Yoshito
Institute of Materials Science, University of Tsukuba
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YAMAGUCHI Hiromu
Institute of Materials Science, University of Tsukuba
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Yamaguchi Hiromu
Institute Of Materials Science Universityof Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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