HASEGAWA Fumio | Tohoku University of Art and Design

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著作論文

Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
M-10 An Adaptive Scheduling Algorithm for On-Demand Video Delivery System
Mpeg-7メタデｰタフォｰマットに基づく大規模映像アｰカイブ･配信システム : 教育システム
Verification Tests Approach Based on "MPEG-7 over Content ID" for the Large Scale Digital Archive
Development of Content Retrieval Application Using MPEG-7 for Archive Video Materials
BROADCASTING PROGRAM PRODUCTION SYSTEM BY USING PETA-BYTE CLASS LARGE SCALE ARCHIVE
Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000℃ on GaAs (111) Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor
Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
Passivation Properties of Plasma CVD AlN Films for GaAs
Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl_3 and AsH_3 System : Condensed Matter
In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl_3 by Surface Photo-Absorption Method
Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl_3
Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl_3 and AsH_3
Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament

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