Tanaka M | Manufacturing Development Center Mitsubishi Electric Corporation

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著作論文

Space-Group Determination of a New Superconductor (Nd_Ce_x)_2(Ba_Nd_y)_2Cu_3O_ using Convergent-Beam Electron Diffraction
Space-Group Determination of a New Superconductor (Nd_Sr_Ce_)_2CuO_ Using Convergent-Beam Electron Diffraction
Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
Site-Specific Studies on X-Ray Magnetic Circular Dichroism at Fe K Edge for Transition-Metal Ferrites
X-Ray Diffuse Scattering Study of Magnetite by the Valence-Difference Contrast Method
Proposal of a Next-Generation Super Resolution Technique
Photolithography System Using Modified Illumination
Photolithography System Using a Combination of Modified Illumination and Phase Shift Mask
Photolithography System Using Annular Illumination : Photolithography
Photolithography System Using Annular Illumination
Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
Improvement in a-Si:H Properties by Inert Gas Plasma Treatment
Practical Simulation of the I-V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking
Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
Magnetic Shielding by Superconducting Y-Ba-Cu-O Prepared by the Modified Quench and Melt Growth (QMG) Process
High Magnetic Flux Trapping by Melt-Grown YBaCuO Superconductors
Effect of Pt Addition on Melt-Processed YBaCuO Superconductors
Critical Current Characteristics in Superconducting Y-Ba-Cu-O Prepared by the Melt Process
Intensity Variation of Transition Radiation Induced by Adsorption of Nitrogen on W(100) Surface
Emission of Radiation Induced by Bombardment of Slow Electrons from a Clean (100) Surface of Tungsten
Nonlinear Optical Properties of CdTe Microcrystallites in CaF_2 Thin Film
Optical Properties of CdTe Microcrystallites in CaF_2
Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
Production Mechanism of a Large-Diameter Uniform Electron Cyclotron Resonance Plasma Generated by a Circular TE_ Mode Microwave
8" Uniform Electron Cyclotron Resonance Plasma Source Using a Circular TE_ Mode Microwave
Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
Study of YBa_2Cu_3 O_7 Superconductor by Low-Temperature Scanning Tunneling Microscopy and Spectroscopy
Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
High-Quality p-Type μc-Si Films Prepared by the Solid Phase Crystallization Method
Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
High Pressure Oxygen Treatment and the Substitution of Sr for Ba on (Nd_Ba_)_2(Ce_Nd_)_2Cu_3O_y Superconductor
Formation of Bi-Pb-Sr-Ca-Cu Oxide Superconducting Layer from Alkoxide Solutions
Formation of As-Deposited Y-Ba-Cu-O Superconducting Film by a High Temperature Spray Phrolysis Method

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