Photolithography System Using Annular Illumination : Photolithography

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-04-30

著者

• HORIE Kazuo

  Kitaitami Works, Mitsubishi Electric Corporation

• Tanaka M

  Production Engineering Research Laboratory Hitachi Ltd.

• Horie K

  Univ. Tokyo Tokyo Jpn

• Horie Kazuo

  Kitaitami Works Mitsubishi Electric Corporation

• Kamon K

  Assoc. Super‐advsnced Electronics Technol. Kanagawa Jpn

• Kamon K

  Kwansei Gakuin Univ. Nishinomiya

• Kamon Kazuya

  Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Ul

• Kamon Kazuya

  School Of Science Kwansei Gakuin University

• Nagata H

  Sumitomo Osaka Cement Co. Ltd. Chiba Jpn

• MIYAMOTO Teruo

  Manufacturing Development Center, Mitsubishi Electric Corporation

• MYOI Yasuhito

  Manufacturing Development Center, Mitsubishi Electric Corporation

• TANAKA Masaaki

  Manufacturing Development Center, Mitsubishi Electric Corporation

• KAMON Kazuya

  LSI Laboratory, Mitsubishi Electric Corporation

• MYOI Yasuhito

  LSI Laboratory, Mitsubishi Electric Corporation

• Tanaka M

  Manufacturing Development Center Mitsubishi Electric Corporation

• Tanaka M

  Toshiba Corp. Kawasaki Jpn

• Tanaka M

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Myoi Yasuhito

  Manufacturing Development Center Mitsubishi Electric Corporation

• Miyamoto Teruo

  Manufacturing Development Center Mitsubishi Electric Corporation

• Nagata H

  Osaka Prefecture Univ. Osaka Jpn

関連論文

• Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction
• Lattice parameter determination of a composition controlled Si_Ge_x layer on a Si (001) substrate using convergent-beam electron diffraction
• Space-Group Determination of a New Superconductor (Nd_Ce_x)_2(Ba_Nd_y)_2Cu_3O_ using Convergent-Beam Electron Diffraction
• Space-Group Determination of a New Superconductor (Nd_Sr_Ce_)_2CuO_ Using Convergent-Beam Electron Diffraction
• EXAFS Study on Premartensitic Phase in Nb_3Sn
• Edge and EXAFS Studies of Bi_2O_3-Y_2O_3 Oxygen Conductor
• EXAFS Studies on Fluorites of β-PbF_2 and SrF_2
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
• 高輝度放射光のX線CTイメージングを用いた高強度鋼中の介在物の定量的評価(高精度な新非破壊検査技術)
• Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
• 1101 光造形法によるマイクロ材料の創製と評価(GS-3 強度評価)
• Site-Specific Studies on X-Ray Magnetic Circular Dichroism at Fe K Edge for Transition-Metal Ferrites
• X-Ray Diffuse Scattering Study of Magnetite by the Valence-Difference Contrast Method
• OS0602 リアルサイズのモデルコンポジットを用いたモードII繊維/樹脂界面はく離靱性の評価(先進複合材料の強度・特性評価,オーガナイズドセッション)
• 723 マイクロモデルを用いた繊維/樹脂界面微視はく離靭性の抽出(GS-3 結晶・破壊)
• 繊維2本および繊維4本のモデル複合材料を用いた繊維/樹脂界面はく離じん性の実験的評価とFRPじん性への寄与の検討 (特集 破壊力学)
• 406 マイクロモデルによる繊維/樹脂界面微視はく離靭性の評価と複合材靭性に関する検討(界面および微視構造の影響II,オーガナイズドセッション8.破壊の発生・進展とその解析・評価・計測)
• 405 モデルコンポジットを用いた繊維/樹脂界面の破壊靭性評価(疲労・摩耗・界面,破壊の発生・進展とその解析・評価・計測,オーガナイスドセッション9)
• Proposal of a Next-Generation Super Resolution Technique
• Photolithography System Using Modified Illumination
• Photolithography System Using a Combination of Modified Illumination and Phase Shift Mask
• Photolithography System Using Annular Illumination : Photolithography
• Photolithography System Using Annular Illumination
• 813 金属材料における疲労き裂発生過程の結晶塑性シミュレーション(GS-3 疲労強度)
• 301 CNT/紫外線硬化樹脂複合材料マイクロエレメントの機械的特性評価とCNT添加量向上の検討(GS-3 ナノ)
• Electroplated Reflection Masks for Soft X-Ray Projection Lithography
• Resist Performance in 5 nm Soft X-Ray Projection Lithography
• Reduction Imaging at 4.5 nm with Schwarzschild Optics
• Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
• Improvement of the Uniformity of Tungsten / Carborn Multilayers by Thermal Processing
• Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
• Normal-Incidence X-Ray Microscope for Carbon Kα Radiation with 0.5 μm Resolution
• Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
• Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
• Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
• Electron Diffraction Study of Ba_2YCu_3O_(y=0.1-0.2)
• Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
• Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
• Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
• Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
• A Format of High-Density Rewritable Optical Disk using Groove Recording
• Optical Disk System Using a High-Numerical Aperture Single Objective Lens and a Blue LD
• 1114 金属材料の疲労初期損傷に関する結晶塑性解析(GS-1 計算力学)
• Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
• Improvement in a-Si:H Properties by Inert Gas Plasma Treatment
• Practical Simulation of the I-V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking
• Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• 長繊維強化プラスチックスにおける巨視的モードI負荷を受ける層間き裂の進展経路
• 529 異方性材で挟まれた等方性材中のき裂進展経路の予測
• ピロータイトFe1-xS構造中の2および3価のFeの分布
• Magnetic Shielding by Superconducting Y-Ba-Cu-O Prepared by the Modified Quench and Melt Growth (QMG) Process
• High Magnetic Flux Trapping by Melt-Grown YBaCuO Superconductors
• Mechanism for AlSiCu Alloy Corrosion
• Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
• Effect of Pt Addition on Melt-Processed YBaCuO Superconductors
• Critical Current Characteristics in Superconducting Y-Ba-Cu-O Prepared by the Melt Process
• Intensity Variation of Transition Radiation Induced by Adsorption of Nitrogen on W(100) Surface
• Emission of Radiation Induced by Bombardment of Slow Electrons from a Clean (100) Surface of Tungsten
• Nonlinear Optical Properties of CdTe Microcrystallites in CaF_2 Thin Film
• Optical Properties of CdTe Microcrystallites in CaF_2
• マイクロモデル複合材料による界面微視はく離靭性の評価と複合材靭性への寄与の検討
• 801 形状記憶合金細線アクチュエータの長期使用下における機械的特性に関する研究(GS-3 力学特性(1))
• 紫外線硬化樹脂を用いたCNT強化複合材料マイクロマテリアルの作製と曲げ特性評価 (JCOM-37 プログラム--材料・構造の複合化と機能化に関するシンポジウム)
• 318 CNT強化紫外線硬化樹脂マイクロマテリアルの機械的特性評価(非鉄素材の応力・ひずみ評価と材料強度,オーガナイズドセッション3.応力・ひずみの測定と材料強度)
• 806 形状記憶合金複合材料アクチュエータの開発と破壊阻止システムへの応用(GS-3 不均質材料)
• 1203 微小モデルコンポジットの創製と界面き裂の進展特性の評価(GS-3,4 複合材料)
• 形状記憶合金アクチュエータによる積層複合材料の層間はく離き裂進展の抑止
• 316 SMA複合材料アクチュエータによる層間はく離き裂進展阻止機能の実験的検討(力学特性,複合材料の開発・応用・評価における新技術,オーガナイスドセッション6,第53期学術講演会)
• 313 界面はく離き裂を有する長繊維強化複合材料のメゾメカニックス解析(損傷・破壊力学,複合材料の開発・応用・評価における新技術,オーガナイスドセッション6,第53期学術講演会)
• 401 長繊維強化複合材料の微視的き裂前縁形状に及ぼす繊維/母材界面効果(破壊の進展とその抑制,破壊の発生・進展とその評価および抑制,オーガナイスドセッション・8,第53期学術講演会)
• 301 鉛フリーはんだにおける金属微粒子によるクリープ強度の向上(GS-4 疲労・クリープ)
• Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
• Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
• Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
• New 8-15 Modulation Code and Reproducing Techniques for High-Density Optical Recording
• Production Mechanism of a Large-Diameter Uniform Electron Cyclotron Resonance Plasma Generated by a Circular TE_ Mode Microwave
• 8" Uniform Electron Cyclotron Resonance Plasma Source Using a Circular TE_ Mode Microwave
• Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
• Study of YBa_2Cu_3 O_7 Superconductor by Low-Temperature Scanning Tunneling Microscopy and Spectroscopy
• Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
• High-Quality p-Type μc-Si Films Prepared by the Solid Phase Crystallization Method
• Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
• EXAFS Study on the Dehydration Process in Mg (OH)_2
• High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
• Temperature and Concentration Dependence of Lattice Constants in Rondom Mixture of Ferroelectric and Antiferroelectric; Rb_(NH_4)_xH_2PO_4
• Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
• One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
• 異方性材で挟まれた接着層中のき裂進展経路(応力損傷評価及び破壊解析)
• 133 積層複合材料のはく離進展抑制のためのアクチュエータ利用の有効性の検討
• 346 アクチュエータを用いた積層複合材料のはく離進展抑制効果
• Structural Studies on the ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy III
• Structural Studies on ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy I
• SMAアクチュエータを用いたCFRPの層間はく離き裂進展抑制機能に関する研究(複合材)
• High Pressure Oxygen Treatment and the Substitution of Sr for Ba on (Nd_Ba_)_2(Ce_Nd_)_2Cu_3O_y Superconductor
• Formation of Bi-Pb-Sr-Ca-Cu Oxide Superconducting Layer from Alkoxide Solutions
• Formation of As-Deposited Y-Ba-Cu-O Superconducting Film by a High Temperature Spray Phrolysis Method
• Electron Energy-Loss Spectra of Carbon Nanotubes

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