Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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Shimada Toshikazu
Electronics Research Laboratory Nissan Motor Co. Ltd.
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Tanaka M
Production Engineering Research Laboratory Hitachi Ltd.
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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SHIMADA Toshikazu
Central Research Laboratory, Hitachi Ltd.
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Tanaka M
Manufacturing Development Center Mitsubishi Electric Corporation
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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Tanaka M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Azuma K
Department Of Electric Engineering Himeji Institute Of Technology
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WATANABE Takeshi
Production Engineering Research Laboratory, Hitachi, Ltd.
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AZUMA Kazufumi
Production Engineering Research Laboratory, Hitachi, Ltd.
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NAKATANI Mitsuo
Production Engineering Research Laboratory, Hitachi, Ltd.
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TANAKA Masahiro
Production Engineering Research Laboratory, Hitachi, Ltd.,
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SONOBE Tadashi
Hitachi Works, Hitachi, Ltd.,
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Sonobe T
Hitachi Works Hitachi Ltd.
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Sonobe Tadashi
Hitachi Ltd. Hitachi Works.
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Shimada T
Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of
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Shimada Toshikazu
Central Research Laboratory
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Nakatani Mitsuo
Production Engineering Research Laboratory Hitachi Ltd.
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Azuma Kazufumi
Production Engineering Research Laboratory, Hitachi Ltd. (Present address)Data Strage and Retrieval Systems Division, Hitachi, Ltd.
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