Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-11-15
著者
-
Shimada Toshikazu
Electronics Research Laboratory Nissan Motor Co. Ltd.
-
Kurihara Koji
Faculty Of Technology Tokyo University Of Agricuture And Technology
-
Tarui Y
National Institute Of Advanced Industrial Science And Technology
-
Kamisako K
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Kuroiwa K
Faculty Of Technology Tokyo University Of Agricuture And Technology
-
Kuroiwa Koichi
Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo
-
TARUI Yasuo
National Institute of Advanced Industrial science and Technology
-
TANIMOTO Satoshi
Electronics Research Laboratory, Nissan Motor Co., Ltd.
-
KOYAMA Hiroyuki
Organic Analysis Section, Research Department, Nissan ARC Ltd.,
-
TARUI Yasuo
Graduate School of Science and Engineering, Waseda University
-
Shimada T
Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of
-
Kuroiwa Koichi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
-
Tanimoto Satoshi
Electronics Research Laboratory Nissan Motor Co. Ltd.
-
Koyama Hiroyuki
Organic Analysis Section Research Department Nissan Arc Ltd.
関連論文
- Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
- Effects of Electrode Geometry on Breakdown Voltage of a Single-Gap Pseudospark Discharge
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer
- SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
- Modification Effect of a-Si_ N_x:H Surface by Hydrogen Radicals
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Effects of Electrode Geometry and Gas Pressure on Breakdown Voltage of a Pseudospark Discharge
- Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
- Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
- Interaction of PbTiO_3 Films with Si Substrate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
- c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method
- Preparation of Tetragonal Perovskite Single Phase PbTiO_3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introdueing Pb and Ti Precursors
- Microstructure of Visible Light Emitting Porous Silicon
- Persistent Spectral Hole-Burning in Semi-Crystalline Matrices Doped with Tetraphenylporphine
- Fine Structure of Porous Si with Visible Photoluminescence
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl_5
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
- Fast and Efficient Photon-Gated Burning of Persistent Spectral Holes in Donor-Acceptor Electron Transfer Systems
- Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings : FUTURE TECHNOLOGY
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
- Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
- Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- Influence of Ce Content on Crystal and Electrical Properties of Ce_xZr_0_2 Thin Films on Si(100) Substrates
- Photo-Process of Tantalum Oxide Films and Their Characteristics : Surfaces, Interfaces and Films
- Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators
- Photoassisted Electrochemical Deposition of Copper from a Bathocuproin Complex
- Preparation of SrBi_2Ta_2O_9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi_2Ta_2O_9/CeO_2/Si(100) Structures
- Initial Stage and Growth Process of Ceria, Yttria-Stabilized-Zirconia and Ceria-Zirconia Mixture Thin Films on Si(100) Surfaces
- Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi_2Ta_2O_9 as the Ferroelectric Material
- Crystal and Electrical Characterizations of Epitaxial Ce_XZr_O_2 Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor
- Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO_2 Buffer Layer
- 励起水素原子の発生とその電子材料薄膜作製への応用〔英文〕 (電子材料技術の新展開)
- Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System
- Preparation of Perovskite Oriented PbZr_xTi_O_3 Films with Suppressed Vapor Phase Reactions by a Digital Chemical Vapor Deposition Method
- Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO_2 Buffer Layer ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Optical Characterization of Undoped a-Si:H Prepared by Photo-CVD and GD Techniques
- Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method
- Carrier Injection into SiO_2 from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO_2
- Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory
- Characterization of CVD-TiN Films Prepared with Metalorganic Source
- Characterization of Pb(Zr,Ti)O_3 Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices
- Fabrication of c-Axis Oriented Pb(Zr, Ti)O_3 Thin Films on Si(100) Substrates Using MgO Intermediate Layer
- Deposition of Low Hydrogen Content Silicon Nitride Film Using High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor
- Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
- RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
- Doping-Induced Defects in P-Doped Photo-CVD a-Si:H
- Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure
- Characterization of μc-Si:H Prepared by Photo-Chemical Vapor Deposition
- Phosphorus Doping Properties of Hydrogenated Amorphous Silicon Prepared by Mercury Sensitized Photo-CVD : Condensed Matter
- Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
- HfO2/Si and HfSiO/Si Structures Fabricated by Oxidation of Metal Thin Films
- Thermal Stability of HfO2 Films Fabricated by Metal Organic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ultrathin ZrO2/Si Structure Using Metal Deposition Followed by Oxygen Annealing