Thermal Stability of HfO2 Films Fabricated by Metal Organic Chemical Vapor Deposition
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概要
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The effect of impurities in HfO2 films fabricated by metal organic chemical vapor deposition (MOCVD) on high-temperature annealing was investigated. Thermal desorption spectroscopy (TDS) shows that residual impurities such as carbon are desorbed from HfO2 films with mass number of 28, expected to be carbon monoxide (CO), during high-temperature annealing. The deterioration of the electrical properties of HfO2 with high-temperature annealing is caused by such desorption. For HfO2 films from which many molecules of the mass number 28 are desorbed, the deterioration, indicated by events such as an increase in leakage current and flat-band voltage shifts caused by 850 °C and 30 min annealing, occurs markedly. The suppression of such desorption caused by the decrease in the number of residual impurities in the films leads to an improvement of the thermal stability of HfO2 films during high-temperature annealing. Furthermore, in the fabrication of HfO2 films using MOCVD, an intermittent introduction of an MO source and oxygen decreases the number of residual impurities compared with conventional MOCVD. Consequently, the stability of HfO2 films against the thermal budget was improved.
- 2008-01-25
著者
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Ueno Tomo
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Kuroiwa Koichi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Hasumi Masahiko
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Kuroiwa Koichi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Nagasato Yoshitaka
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Iwazaki Yoshitaka
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Hasumi Masahiko
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Ueno Tomo
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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