Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
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概要
- 論文の詳細を見る
Silicon nitride film was deposited on silicon by gas phase reaction between SiH_4 and NH_3 using N_2 as the carrier gas and a horizontal resistance-heated furnace at the temperature range of 650 to 950℃. The higher the substrate temperature became, the larger the wave number of the infrared, which corresponds to the maximum absorption. Film deposited at lower temperature always showed the hysteresis of C-V curve, but it almost disappeared by elevating substrate temperature and supplying much amount of ammonia. MNS diode was very stable to the BT-treatment even if it was intentionally contaminated with NaOH. Interface charge density was nearly 1.5×10^<12>e/cm^2 which was little dependent of surface treatments before depositing the film, and seemed to be almost determined by the positive charge in nitride film. C-V curve of the diode showed the frequency dependence, which was due to the accumulation of electrons in nitride film near the interface.
- 社団法人応用物理学会の論文
- 1968-02-05
著者
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Kuroiwa Koichi
Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo
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Kuroiwa Koichi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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HOH Koitiro
Department of Electronics Engineering, Faculty of Engineering, University of Tokyo
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HIRAI Katsumi
Department of Electronics Engineering, Faculty of Engineering, University of Tokyo
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Hoh Koitiro
Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo
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Hirai Katsumi
Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo
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