HfO2/Si and HfSiO/Si Structures Fabricated by Oxidation of Metal Thin Films
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概要
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Hafnium metal deposition followed by oxidation, either on bare silicon or SiO2/Si substrates, was performed for the fabrication of high-$k$/Si gate stacks with small equivalent oxide thickness values. HfO2/Si structures were fabricated without substrate heating but with the electron cyclotron resonance (ECR) plasma oxidation of Hf metal deposited on bare Si substrates by DC magnetron sputtering. These HfO2/Si structures have ideal abrupt interface without interfacial layer (IL)-SiO2 and silicide layers, as determined by an X-ray photoelectron spectroscopy (XPS) measurements. A direct stacking was induced by the characteristic film growth of ECR plasma in a buried interfacial region. On the other hand, on SiO2/Si substrates, the HfSiO/Si structures were successfully fabricated by thermal treatment for both the interdiffusion of Hf metal and SiO2, and the oxidation of the layer. The HfSiO/Si structures show small leakage currents because of high barrier heights and have no hafnium silicide layer.
- 2009-05-25
著者
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Ueno Tomo
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Kuroiwa Koichi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Hasumi Masahiko
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Kuroiwa Koichi
Department of Electronic and Electrical Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Iwazaki Yoshitaka
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Oniki Yusuke
Department of Electronic and Electrical Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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