Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure
スポンサーリンク
概要
- 論文の詳細を見る
To investigate the dependence of transport properties of photo-CVD a-Si:H on deposition temperature, field effect mobility (μ_<FE>) and threshold voltage (V_<th>) of thin film transistor (TFT) fabricated on a-Si:H prepared at different substrate temperatures were measured. Both μ_<FE> and V_<th> and corresponding photoluminescence (PL) intensity show an optimum value at the deposition temperature of 200℃.
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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Suzuki Kazuhiko
Department of Veterinary Pathology, Graduate School of Agricultural and Life Sciences, The Universit
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Takeuchi Hiroshi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Suzuki K
Department Of Information And Communication Technology Tokai University
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Tarui Yasuo
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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Kuroiwa K
Faculty Of Technology Tokyo University Of Agricuture And Technology
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TARUI Yasuo
National Institute of Advanced Industrial science and Technology
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Kuroiwa Koichi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Takeuchi H
Department Of Parasitology Nara Medical University
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YUKAWA Yohsuke
Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Tec
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TAKAO Hiroaki
Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Tec
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Suzuki Kazuhiko
Department Of Electrical Engineering Hokkaido Institute Of Technology
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Yukawa Yohsuke
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Technology
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