High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-02-15
著者
-
ICHIHARA Masaki
Institute for Solid State Physics, University of Tokyo
-
Suzuki K
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
-
SUZUKI Kunio
Institute for Solid State Physics, University of Tokyo
-
Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
-
Takeuchi S
Univ. Tokyo Tokyo Jpn
-
TAKEUCHI Shin
Institute for Solid State Physics,University of Tokyo
-
Ichihara M
Univ. Tokyo Chiba Jpn
-
Ichihara Masaki
Institute For Solid State Physics The University Of Tokyo
-
Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
-
Suzuki K
Department Of Information And Communication Technology Tokai University
-
Takeuchi Shin
Institute For Solid State Physics The University Of Tokyo
-
Suzuki Kunio
Institute For Solid State Physics University Of Tokyo
関連論文
- Magnetic and Structural Studies of the Quasi-Two-Dimensional Spin-Gap System (CuCl)LaNb_2O_7(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Effective-Time of Pulsed Photothermal Heating for Polycrystalline Nucleation of Perovskite Oxide Films from an Amorphous Matrix
- Formation of Nanocrystalline Structures by Crystallization of Amorphous Fe-M-B (M=IVa to VIa Group Metal) Alloys
- NMR and Susceptibility Studies of Quasicrystalline Al-Mn-Si-Ru Alloys
- Metal-Insulator Transition in the Bi_2Sr_2Ca_Y_xCu_2O_ System
- High Power Er^-Doped Fiber Amplifier Pumped by 1.48 μm Laser Diodes
- An 8 mW cw Er^-Doped Fiber Laser Pumped by 1.46 μm InGaAsP Laser Diodes
- NMR and Susceptibility Studies of Al_Mn_ Quasicrystal
- High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals
- Microstructures in a Twinned Single Crystal of Tetragonal La_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- In-Situ Observation of Formation of Staking Faults in Ni_3Ga by Stretching Thin Foils in an Electron Microscope
- Structure and Stability of Quasicrystalline Al-Mn Alloys
- Stoichiometry of Quasicrystalline Al-Mn
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Sb Multiple Ion Implanted Channel for Low V_, Deep Submicron SOI-pMOSFETs
- Vth Rolloff Free Sub 0.1μm SOI MOSFETs Using Counter Doping into a Uniformly and Heavily Doped Channel Region
- Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Structure Change of Microcrystalline Silicon Films in Deposition Process
- Nonmagnetic Ground State in Fully Filled Pr_xFe_4Sb_ (x = 1.0) Synthesized under High Pressure(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Superconductivity of ZrRuP
- Electrical Conductivity of Nickel Phosphides
- Electrical Properties of Zn-Mg-RE (RE=Y,Gd) Icosahedral Quasicrystals
- Al-Pd-Re Icosahedral Quasicrystals and Their Low Electrical Conductivities
- Toward Insulating Quasicrystalline Alloy in Al-Pd-Re Icosahedral Phase
- Electrical Resistivities of Al-Pd-Mn Icosahedral Quasicrystals
- Anisotropic Conductivity in a Decagonal Quasicrystal of Al_Ni_Co_
- A Systematic Change of Electrical Resistivity in Al_5(Mg_xLi_1-x)_3.5〜4Cu_1 Icosahedral Quasicrystals
- Plastic Deformation of Al-Ru-Cu Icosahedral Quasicrystals
- Electronic Properities of the Single-Grained Icosahedral Phase of Al-Li-Cu
- Temperature and Magnetic Field Dependence of Electrical Resistivity in Al-Mn Quasicrystal at Low Temperatures
- Local Magnetic Moment in Al-Mn Based Quasicrystals
- Structural Phase Transition in Stage 2 SbCl_5-Graphite Intercalation Compound
- Plastic Deformation of Al-Pd-Mn Icosahedral Quasicrystal
- ΛN→NN Decay in the Quark Cluster Model (クォ-ク・ハドロンのダイナミックス)
- Structural Phase Transition and Metallic Behavior in Misfit Layered (Bi, Pb)-Sr-Co-O System
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy
- Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process
- Characterization of Epitaxial ZnSe/GaAs(100) Interface Properties and Their Control by (HF+Se)-Pretreatment
- Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe Homointerface
- Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
- Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Electrical Transport Properties of Al-Cu-Os Icosahedral Quasicrystal
- New Stable Icosahedral Quasicrystal in Mg-Pd-Al System
- Second-Order Piezoresistance Coefficients of p-Type Silicon
- Second-Order Piezoresistance Coefficients of n-Type Silicon
- X-Ray Photoelectron Spectroscopy Using A Focused 300 μm-Diameter X-Ray Beam
- Production of High-Quality Thin-Film Samples of Al-Cu-Fe Icosahedral Quasicrystal
- Ultrasonic Velocity in Large-Grained Al-Li-Cu Quasicrystal
- Electronic Structure of Al-Li-Cu Quasicrystal: Photoemission and Inverse Photoemission Studies of Icosahedral and Crystalline Phases
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
- Dispersion for Double Refraction in Electron Diffraction by Magnesium Oxide Crystal
- A Realistic Model Structure of Frank-Kasper-Type Icosahedral Quasicrystals
- Hardness of Quasicrystals
- Fabrication of Epitaxial Diamond Thin Film on Iridium
- Epitaxial Growth of Diamond on Iridium
- Growth of Diamond Thin Films by dc Plasma Chemical Vapor Deposition and Characteristics of the Plasma
- A Low-Temperature Order-Disorder Transition in a Cubic Cd_6Yb Crystalline Approximant : Structure and Mechanical and Thermal Properties of Condensed Matter
- Age-related Change in Relationship between White Blood Cell Count and Some Features of the Metabolic Syndrome
- Association of Lifestyle with Serum Lipid Levels : a Study of Middle-Aged Japanese Men
- Body Mass Index as a Measure of Health Care for Japanese Male Office Workers
- The Incidence of Hyperuricemia and Correlated Factors in Middle-Ages Japanese Men
- Associations of Body Mass Index and Percentage Body Fat by Bioelectrical Impedance Analysis with Cardiovascular Risk Factors in Japanese Male Office Workers
- Relation of Body Weight Change to Changes in Atherogenic Traits, A Study of Middle-Aged Japanese Obese Male Office Workers
- Effects of Coffee Consumption against the Development of Liver Dysfunction:A4-Year Follow-Up Study of Middle-Aged Japanese Male Office Workers
- Lifestyle and the Development of Dyslipidemia : a 4-year Follow-up Study of Middle-aged Japanese Male Office Workers
- Serum Uric Acid : Correlation with Biological, Clinical and Behavioral Factors in Japanese Men
- Risk Factors for the Incidence of Aortic Stiffness by Serial Aortic Pulse Wave Velocity Measurement in Middle-aged Japanese men
- Microscopic X-ray Photoelectron Spectroscopy Using a Wolter Type X-ray Mirror
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
- Optical Characterization of Undoped a-Si:H Prepared by Photo-CVD and GD Techniques
- Validity of the Conventional Indirect Methods Including Friedewald Method for Determining Serum Low-Density Lipoprotein Cholesterol Level: Comparison with the Direct Homogeneous Enzymatic Analysis
- Crystallization from a Glassy State in the Bi-Sr-Ca-Cu-O System
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si : Beam-Induced Physics and Chemistry
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
- Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System
- Doping-Induced Defects in P-Doped Photo-CVD a-Si:H
- Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure
- Resonant Directional Excitation of Helicon Waves by a Helical Antenna
- Hot Spots and Electron Heating Processes in a Helicon-Wave Excited Plasma
- Soft Magnetic Properties of bcc Fe-M-B-Cu (M=Ti, Nb or Ta) Alloys with Nanoscale Grain Size
- Si Etching with a Hot SF_6 Beam and the Etching Mechanism
- Analytical Investigation of Plasma and Electrode Potentials in a Diode Type RF Discharge
- Si Etching with a Hot SF_6 Beam
- Titration Method for Measuring Fluorine Atom Concentration in Microwave Plasma Etching
- Characterization of μc-Si:H Prepared by Photo-Chemical Vapor Deposition
- Diffuse Electron Scattering from Magnetite above the Verwey Transition Temperature
- Phosphorus Doping Properties of Hydrogenated Amorphous Silicon Prepared by Mercury Sensitized Photo-CVD : Condensed Matter