Temperature and Magnetic Field Dependence of Electrical Resistivity in Al-Mn Quasicrystal at Low Temperatures
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概要
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The temperature dependence of electrical resistivity and the effect of magnetic fieldon it have been measured in a quasicrystalline A1.,.,Mn..., alloy of almost singlephase. This phase has large resistivity ( - 800 gOcm) and a small negative temperaturecoefficient above 30 K like high-resistive amorphous metals, though the crystallizedphase has a positive coefficient like usual metals. Below 30 K, the resistivity of thequasicrystalline phase increases rapidly with decreasing temperature, exhibiting exactlogarithmic temperature dependence from 1 K to 15 K. The resistivity increases withincreasing magnetic field (< 140 kG) in this temperature range, and the origin of thelogarithmic temperature dependence is not considered to be the ordinary Kondoeffect. Some discussion is made by comparing the present results with those of amorphous metals.
- 社団法人日本物理学会の論文
- 1986-06-15
著者
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Hashimoto Tatsuo
Institute For Solid State Physics The University Of Tokyo
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Takeuchi S
Toppan Printing Co. Ltd. Saitama Jpn
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Hashimoto T
International Superconductivity Technol. Center Tokyo Jpn
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KIMURA Kaoru
Institute for Solid State Physics,University of Tokyo
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TAKEUCHI Shin
Institute for Solid State Physics,University of Tokyo
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Kishi Kazuhiko
Institute For Solid State Physics The University Of Tokyo
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Kimura Kaoru
Institute For Solid State Physics The University Of Tokyo
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Takeuchi Shin
Institute For Solid State Physics The University Of Tokyo
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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