Photoluminescence Spectra of β-Rhombohedral Boron
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概要
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We report the detailed featvrres of the photoltruaainescence (PL) spectra of' a single crystal ofQ-rhottabohedral boron (/1V-B) in the range of 900 -1700 nun (0.73-1.38 eV), Broad spectra whosepeak energy was 1.14 eV were observed. Tlae peak energy corresponds to the recornbination of anelectron in a trapping level with a hole in tl'ne intrinsic acceptor level, which is char?tcteristic of p-B and originates from tlae tuniqtme electronic structure of an icosahedral cltrster Ban. Ternperattrredependence of' the PL intensity indicates that there are txvo thermal escape pr'ocesses of electronswhose activation energies are ?tbout 0.10 ?trtd O.OO4eV. The f'ortaaer is attrilctrted to the escapeprocess of an electroz'x froraa the electron trapping level to the coradtmction lcatnd. These resultsagree with the proposed band strtrcttrre uaaodel based on the electronic structtrre of' B12. PL decaynaueasurernent slaows tlr?rt there are txvo couaaponents with lifetiraaes of 4 x 10 "s and 5 x 10 's,
- 社団法人日本物理学会の論文
- 1998-12-15
著者
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Kimura K
Univ. Tokyo Tokyo Jpn
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Kimura K
Faculty Of Engineering Tokyo University Of Agriculture And Technology
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KIMURA Kaoru
Department of Advanced Materials Science, The University of Tokyo
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Kishi Kazuhiko
Institute For Solid State Physics The University Of Tokyo
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Hori Akira
Department Of Materials Science Faculty Of Engineering University Of Tokyo
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TADA Tetsuya
National Institute for Advanced Interdisciplinary Research
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Kimura Kaoru
Department Of Advanced Materials Science The University Of Tokyo
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Kimura Kaoru
Department Of Advanced Material Science University Of Tokyo
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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