Quantitative Evaluation of Dopant Concentration in Shallow Silicon p--n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy
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概要
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Quantitative evaluation of the dopant concentration across silicon p--n junctions has been performed on oxide-passivated surfaces by using tunneling current mapping in the constant-gap mode of a multimode scanning probe microscope (MSPM). A distinct difference between regions with different impurity concentrations was observed in tunneling current maps when a constant tunneling gap was maintained by using repulsive force acting on the MSPM probe. To extract impurity profiles, the results of three-dimensional device simulations within the current continuity model were compared with measured bias-dependent current profiles. The obtained impurity profiles showed agreement with the actual donor concentration in the p--n junction region. The results demonstrate the applicability of the method for quantitative analysis of the local impurity distribution in modern semiconductor devices with improved sensitivity and nanometer spatial resolution.
- 2013-04-25
著者
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TADA Tetsuya
National Institute for Advanced Interdisciplinary Research
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Kanayama Toshihiko
National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Bolotov Leonid
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Arimoto Hiroshi
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
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Kanayama Toshihiko
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
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Fukuda Koichi
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
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