Quantitative Evaluation of Dopant Concentration in Shallow Silicon p-n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy (Special Issue : Solid State Devices and Materials)
スポンサーリンク
概要
著者
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TADA Tetsuya
National Institute for Advanced Interdisciplinary Research
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Kanayama Toshihiko
National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Bolotov Leonid
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Arimoto Hiroshi
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
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Fukuda Koichi
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
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- Quantitative Evaluation of Dopant Concentration in Shallow Silicon p-n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy (Special Issue : Solid State Devices and Materials)