Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-12-30
著者
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Wada T
Department Of Materials Chemistry Ryukoku University
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Sugiyama Y
Jst‐crest Ibaraki Jpn
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Wada T
Ryukoku Univ. Otsu Jpn
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Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ichimura S
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Wada T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Sugiyama Yasuyuki
Ntt Interdisciplinary Research Laboratories:(present Address) Science And Technology Agency
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KOMURO Masanori
Electrotechnical Laboratory
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ICHIMURA Shingo
Electrotechnical Laboratory, Umezono
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Wada T
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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WADA Toshimi
Electrotechnical Laboratory
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KANAYAMA Toshihiko
National Institute for Advanced Interdisciplinatry Research
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Ichimura Shingo
Electrotechnical Laboratory
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Komuro M
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kanayama Toshihiko
National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn
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