Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation
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概要
- 論文の詳細を見る
When a germanium tunnel diode is irradiated by 7.2 MeV electrons with a total flux of ∼4.6×10^<17> electrons/cm^2, the capacitance built-in voltage υ_b decreases with the increase in bombardment dose. The variation of the Fermi level obtained from the change in υ_b is about 0.040 eV for the total flux. Considering that the carrier concentration of a heavily doped n-type germanium decreases with the electron irradiation, the Fermi level changes only in the n-side of the tunnel diodes. This calculated variation of the Fermi level in the n-side caused by the carrier removal is in good agreement with the above result.
- 社団法人応用物理学会の論文
- 1967-01-15
著者
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Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nakamura Toshio
Department Of Computer And Mathematical Sciences Graduate School Of Information Sciences Tohoku Univ
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FUKUOKA Yutaka
Suzuka College of Technology
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Fukuoka Yutaka
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Arizumi Tetsuya
Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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MARUYAMA Azusa
Department of Electronics, Faculty of Engineering, Nagoya University
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Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
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Nakamura Toshio
Department Of Electronics Faculty Of Engineering Nagoya University
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Nakamura Toshio
Department Of Biophysics Neuroinformation Research Institute School Of Medicine Kanazawa University
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Maruyama Azusa
Department Of Electronics Faculty Of Engineering Nagoya University
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