Epitaxial Vapor Growth of Gallium Antimonide

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概要

• 論文の詳細を見る

• Epitaxial vapor growth of gallium antimonide in the closed tube process is studied using polycrystal gallium antimonide and hydrogen chloride as the source crystal and the transport agent respectively. The transport rate is maximum when the hydrogen chloride concentration initially charged in the reactor is about 10^<-7> mole per unit volume. The surface morphology of the grown layer is strongly dependent on the pretreatment of substrate surface: The grown layer is mirror-smooth when the substrate surface is vapor-etched in situ for about 30 minutes preceding to the deposition. The electrical properties of the grown layers are studied by using the Pauw's method. The hole concentration in the grown layer obtained in the routine experiment is comparable to or smaller than the lowest value ever reported (3〜4×10^<16> holes/cm^3), and the hole mobility ranges from 700 to 800 cm^2/V・sec without any indication of compensation.

• 社団法人応用物理学会の論文
• 1970-09-05

著者

• ARIZUMI Tetsuya

  Department of Electronic Engineering, Faculty of Engineering, Nagoya University

• KAKEHI Masahiro

  Department of Applied Biological Chemistry, The University of Tokyo

• Kakehi Masahiro

  Department Of Applied Biological Chemistry The University Of Tokyo

• SHIMOKAWA Ryuichi

  Department of Electronics, Faculty of Engineering, Nagoya University

• Arizumi Tetsuya

  Department Of Electronic Engineering Faculty Of Engineering Nagoya University

• Shimokawa Ryuichi

  Department Of Electronics Faculty Of Engineering Nagoya University:(present Address) Tanashi Branch

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