Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
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概要
- 論文の詳細を見る
The vapor growth of silicon nitride film is studied thermodynamically for SiH_4-NH_3-H_2 and SiCl_4-NH_3-H_2 systems. By calculating the partial pressures of gaseous species involved in the reactions, the deposition rates of silicon nitride are determined. The theoretical results for SiH_4-NH_3-H_2 system are compared with the experimental data obtained by Bean et al. and the agreements are found quite good, indicating that an equilibrium or at least a quasi-equilibrium is always established. However for SiCl_4-NH_3-H_2 system the agreements are rather poor, suggesting the deviation from the quasi-equilibrium states or the existence of the complex chemical intermediates etc.
- 社団法人応用物理学会の論文
- 1968-09-05
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Ogawa Hiroshi
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address)department Of El
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NISHINAGA Tatau
Department of Electronics, Faculty of Engineering, Nagoya University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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