A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
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概要
- 論文の詳細を見る
A new continuous method for growing epitaxial silicon films of better quality is developed. The principle of this method is based on a thermodynamical result that the H_2-SiCl_4 system involving seed silicon crystals tends to the growth reaction in a restricted temperature range, while otherwise it tends to the etching reaction. By in situ etching the substrates with H_2-SiCl_4 just before the deposition, the substrate surfaces can be free from contamination and crystal defects. Immediately after the etching, the epitaxial layers are grown in the same reactor. The deposition or etching rate can be qualitatively estimated from the thermodynamical calculation using the extended quasiequilibrium model.
- 社団法人応用物理学会の論文
- 1969-01-05
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Kasuga Masanobu
Department Of Electronics Faculty Of Engineering Nagoya University
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Kasuga Masanobu
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Ogawa Hiroshi
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address)department Of El
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NISHINAGA Tatau
Department of Electronics, Faculty of Engineering, Nagoya University
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Kasuga Masanobu
Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Yamanashi
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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