Chemical Vapor Growth of ZnTe on GaAs by the Closed-Tube Method
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概要
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The epitaxial growth of ZnTe on a GaAs(100)surface by a closed-tube chemical vapor transport method in the ZnTe-GaAs-I_2 system was investigated.The transport and growth rates of ZnTe and the crystalline quality and electrical properties of grown ZnTe layers are described here as functions of the iodine concentration (M_<12>)and the substrate temperature(T_s).The transport and growth rates have a maximum value as a function of M_<12>, and increase with increasing T_s.Thermodynamic calculations suggest that gallium iodide plays an important role in the ZnTe-GaAs-I_2 system.It has been found that epitaxial ZnTe layers can be grown even at the very low substrate temperature of 547℃.The ZnTe surfaces grown at 650℃ were smooth and mirror-like.The resistivity of the grown ZnTe has a tendency to increase with decreasing iodine concentration and substrate temperature.Typical values of the resistivity and the mobility of the ZnTe layer grown at 650℃ were 5.2×10^2Ωcm and 90 cm^2/V・s respectively at room temperature.
- 社団法人応用物理学会の論文
- 1979-10-05
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Tsuru Kazuo
Department Of Electrical Engineering Faculty Of Science And Engineering Saga University
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Tsuru Kazuo
Department Of Applied Science Faculty Of Engineering Kyushu University
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