The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask
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概要
- 論文の詳細を見る
The selective epitaxial growth of Si through the window in silicon nitride film is studied for the SiCl_4-H_2 system. Experiments prove that the silicon nitride film is extremely stable compared with the usual silicon dioxide film. To find out the necessary conditions for the selective epitaxial growth, the growth rates of Si on silicon nitride film and on silicon bare surface are obtained independently from the experiment. The critical SiCl_4 pressure for the nucleation on silicon nitride film is determined as a function of growth temperature. The experimental results are explained by the nucleation theory.
- 社団法人応用物理学会の論文
- 1971-12-05
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Kasuga Masanobu
Department Of Electronics Faculty Of Engineering Nagoya University
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Kasuga Masanobu
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Ogawa Hiroshi
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address)department Of El
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NISHINAGA Tatau
Department of Electronics, Faculty of Engineering, Nagoya University
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Kasuga Masanobu
Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Yamanashi
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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