Difference of Thermal Properties between Threshold Type and Memory Type Chalcogenide Glass Semiconductors
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概要
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Thermal effects on the Te_lt;65>Se_lt;15>Ge_lt;20> threshold glass and Te_lt;45>Se_lt;50>Sb_5 memory glass are investigated by electrical conduction, D.T.A. and X-ray diffraction. The results are summarized as follows: 1) the crystallization by annealing proceeds from the surfaces for both types of glass. 2) Crystallites mainly formed are Te and Sb for Te_lt;65>Se_lt;15>Ge_lt;20> and for Te_lt;45>Se_lt;50>Sb_5 respectively. 3) From the curve of resistivities vs. annealing time, the rate constant u for the decrease in the resistivity is estimated to be u=0.13/min and 0.25/min for Te_lt;65>Se_lt;15>Ge_lt;20> and Te_lt;45>Se_lt;50>Sb_5 respectively. 4) The area of the exothermic peak is proportional to the heat of transition, and it is about three times larger for Te_lt;45>Se_lt;50>Sb_5 than for Te_lt;65>Se_lt;15>Ge_lt;20>. But the melting temperature T_m of Te_lt;45>Se_lt;50>Sb_5 is lower than that of Te_lt;65>Se_lt;15>Ge_lt;20>. 5) The fast rate of glass-fluid-crystallite transition of Te_lt;45>Se_lt;50>Ge_5 and therefore its action as the memory type switching can be well understood.
- 社団法人応用物理学会の論文
- 1972-09-05
著者
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SHIMAKAWA Koichi
Department of Clinical Pathology, Tenri Hospital
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Shimakawa Koichi
Department Of Electrical Engineering Faculty Of Engineering Gifu University
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INAGAKI Yonekazu
Department of Electrical Engineering, Faculty of Engineering, Gifu University
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Inagaki Yonekazu
Department Of Electrical Engineering Faculty Of Engineering Gifu University
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