The Doppler Effects of the Drifting Plasma in Semiconductors

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概要

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• The Doppler effects of injected carriers of semiconductor are detected in microwave fields and applied to the measurement of the drift velocity of semiconductor plasma. The beat frequency (Δf) between incident and Doppler shifted microwave signals is theoretically shown to be given by Δf=(2v_d/c_p)f_0, where v_d and c_p are the drift velocity of injected carrier and the phase velocity of electromagnetic wave of frequency f_0 in a wave guide, respectively. This relation is verified experimentally by the observation of the Doppler signals in 35G.c/s as well as by the measurement of the drift time between two tapered wave guides of 10G.c/s. The drift velocity of the injected carriers can be measured over a wide range of electric field strength. In lower electric field strengths the drift velocity is equal to the ambipolar drift velocity, but in high electric fields it deviates from the ambipolar velocity and finally saturates to a constant value.

• 社団法人応用物理学会の論文
• 1965-11-15

著者

• Iwai Sohachi

  Department Of Electronics Faculty Of Engineering Nagoya University

• ARIZUMI Tetsuya

  Department of Electronic Engineering, Faculty of Engineering, Nagoya University

• Arizumi Tetsuya

  Department Of Electronic Engineering Faculty Of Engineering Nagoya University

• UMENO Masayuki

  Department of Electronics, Faculty of Engineering, Nagoya University

• Umeno Masayuki

  Department Of Electronics Faculty Of Engineering Nagoya University

• ARIZUMI Tetsuya

  Department of Electronics, Faculty of Engineering, Nagoya University

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